Title:

RF Design Engineers

Location:

Cambridge

Salary:

GBP 35,000 to GBP 60,000 per year (GBP 35-60K + excellent benefits / stock)

Description:

Several opportunities exist for experienced RF Design Engineers to join a pioneering venture backed start-up company. Thefounding team has an impressive pedigree, engineers that always strive to be at the forefront of technology. They havedeveloped a novel technique that considerably reduces the power required by transmitters.This role is to design high power RF reference amplifier designs. Experience of high power RF design using LDMOS and GaAstransistors is essential.The successful candidate will have most of the following skills / experience Experience of 1-3GHz high power single ended and/or balanced linear RF amplifiers using LDMOS and/or GaAs devices Thorough understanding of low impedance matching techniques using microstrip transmission lines Familiarity with RF linear and non-linear simulation e.g ADS, MWO Working knowledge of RF characteristics of modern modulation standards e.g WCDMA / OFDM Understanding of modern RF measurements and techniques, including measurement of efficiency, ACPR, EVM IM3 Knowledge of load pull techniques and efficiency enhancement techniques such as Doherty amplifiers would beadvantageousPlease call IC Resources to discuss this further.